Alpha Tantalum Coated Ø4 in Sapphire Wafer | 2000 Å α-Ta | 1/pkg
$1,450.00 USD
- Substrate: Prime Grade Ø4 in Single-crystal Sapphire (Al2O3), C-Plane (0001), DSP
- Film Phase: α-Tantalum (BCC structure)
- Deposition Method: High-Vacuum Magnetron Sputtering (Cleanroom Fabricated)
- Film Thickness: 2000 Å
- Typical Resistivity: ~ 20 µΩ·cm (room temp)
- Typical Tc: ~ 4.5 K
- Residual Resistivity Ratio (RRR): > 5
- Pack Size: 1/pkg
- Coating Area: Single Side; 5 mm edge exclusion
- Lead Time: 2-3 weeks
Our Alpha-phase Tantalum (α-Ta) films on sapphire represent the pinnacle of material purity for quantum information science. By utilizing High-Vacuum Magnetron Sputtering within a strictly controlled cleanroom environment, we achieve films with exceptional crystallinity and ultra-low defect density.
We start with premium 4-inch C-plane (0001) Sapphire. These single-crystal Al2O3 wafers are 1.5 mm thick and double-side polished (DSP), providing a robust, ultra-flat foundation that minimizes substrate-induced dielectric loss.
Unlike standard room-temperature depositions, our high-temperature process provides the thermal energy necessary for Tantalum atoms to achieve an epitaxial-like orientation on the sapphire lattice.
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Seedless Growth: Direct deposition on sapphire eliminates the need for lossy metallic seed layers, ensuring the interface remains as pristine as possible.
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Phase Stability: The high-temperature environment guarantees α-phase transition, characterized by low resistivity and a high superconducting Tc.
At Angstrom Engineering we take pride in offering high quality Substrata products and services at affordable prices.
Questions? Please email us at [email protected] or call our toll free line at 1 519.894.4441.