Alpha Tantalum Coated Ø4 in Silicon Wafer | 2000 Å α-Ta | 3/pkg

Our Alpha-phase Tantalum (α-Ta) films on silicon are designed to provide high-quality superconducting thin films while maintaining compatibility with temperature-sensitive processes and scalable device manufacturing. Using High-Vacuum Magnetron Sputtering in a controlled cleanroom environment, both the Niobium (Nb) seed layer and the α-Ta film are deposited with excellent uniformity, purity, and process repeatability.

We start with premium silicon substrates and utilize a carefully engineered Nb seed layer to promote the formation of the desired α-phase tantalum at room temperature. This approach eliminates the need for high-temperature processing while still enabling the growth of high-quality α-Ta films suitable for demanding research applications.

The room-temperature deposition process also enables α-Ta coatings on a wide range of custom substrates and components beyond silicon. Contact us for a custom quote tailored to your application.

• Room-Temperature Deposition: The Nb seed layer enables α-phase tantalum growth without elevated substrate temperatures, making the process compatible with a wider range of devices and fabrication workflows.
• High-Quality Thin Films: Both the Nb seed layer and α-Ta film are deposited by magnetron sputtering, producing dense, uniform, and highly reproducible coatings with excellent material quality.
• Scalable Manufacturing: The process is well suited for research and production environments requiring consistent superconducting thin-film performance across multiple substrates.

At Angstrom Engineering, we take pride in offering high-quality Substrata products and services at affordable prices.