ALPHA TANTALUM (α-Ta) COATED PRODUCTS

Alpha Tantalum Coated Wafers | High-Coherence Superconducting Thin Films

Optimize your quantum hardware with Alpha-phase Tantalum thin films. Engineered for superior qubit coherence, our α-Ta coatings provide a high-purity, low-loss alternative to niobium. Whether you require the thermal performance of Sapphire or the scalability of Silicon, our wafers are designed to minimize Two-Level System (TLS) loss and maximize device performance.

Key Technical Advantages:

• High Transition Temperature (Tc): Reliable superconductivity at ~ 4.5 K.

• Reduced Decoherence: Stable native oxides significantly lower surface dielectric loss.

• Phase-Locked Growth: Guaranteed Alpha-phase purity via high-temp sapphire growth or Nb-seeded silicon growth.

• Research-Ready: Compatible with standard lithography and etching processes for Josephson Junction and resonator fabrication.

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α-Tantalum Coated Sapphire

High -Temperature Growth, Seedless

Optimized for ultra-high performance, these films are grown at high temperatures directly on sapphire substrates using magnetron sputtering to achieve maximum crystal quality and high-purity α-phase transition.

α-Tantalum Coated High Resistivity Silicon

High -Temperature Growth, Seedless

Optimized for ultra-high performance, these films are grown at high temperatures directly on high resistivity silicon substrates using magnetron sputtering to achieve maximum crystal quality and high-purity α-phase transition.

α-Tantalum Coated Silicon

Low-Temperature Growth, Nb Seed Layer

Designed for scalability and CMOS compatibility, these magnetron sputtered films utilize a thin Niobium (Nb) seed layer to promote α-phase growth on silicon while maintaining low substrate temperatures during processing.